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CSD25213W10

Manufacturer:

Texas Instruments

Mfr.Part #:

CSD25213W10

Datasheet:
Description:

MOSFETs DSBGA-4 SMD/SMT P-Channel number of channels:1 1 W -20 V Continuous Drain Current (ID):-1.6 A 2.2 nC

ParameterValue
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Pins4
Height625 µm
PackagingReel
Thickness0.65 mm
RoHSCompliant
Contact PlatingCopper, Silver, Tin
Number of Elements1
Lifecycle StatusProduction (Last Updated: 1 day ago)
Max Power Dissipation1 W
Power Dissipation1 W
Number of Channels1
Input capacitance478 pF
Continuous Drain Current (ID)-1.6 A
Rds On Max47 mΩ
Drain to Source Voltage (Vdss)-20 V
FET Type(Transistor Polarity)P-Channel
Turn-On Delay Time510 ns
Turn-Off Delay Time1 µs
Element ConfigurationSingle
Fall Time970 ns
Rise Time520 ns
Gate Charge2.2 nC
Drain to Source Resistance47 mΩ
Max Junction Temperature (Tj)150 °C
Gate to Source Voltage (Vgs)-6 V
Drain to Source Breakdown Voltage (Vds)-20 V
Schedule B8541290080
Manufacturer Lifecycle StatusACTIVE (Last Updated: 1 day ago)
Gate to Source Threshold Voltage850 mV

Stock: 2732

Distributors
pcbx
Unit Price$0.35052
Ext.Price$0.35052
QtyUnit PriceExt.Price
1$0.35052$0.35052
10$0.21373$2.13730
50$0.17258$8.62900
100$0.13936$13.93600
500$0.10430$52.15000
1000$0.08806$88.06000
3000$0.07822$234.66000
5000$0.06598$329.90000
10000$0.05566$556.60000